|1 pcs||$ 0.56|
PKCH2BB N-channel enhancement mode field effect transistor PDFN 5x6P on T9+ hash board.
1. Pb−Free, Halogen Free and RoHS compliant.
2. Low RDS(on) to Minimize Conduction Losses.
3. Ohmic Region Good RDS(on) Ratio.
4. Optimized Gate Charge to Minimize Switching Losses.
Absolute maximum ratings (TA = 25 °C )
Operating junction & storage temperature Range: -55 to 150°C
Continuous drain current:
TC = 25 °C: 228A
TC = 100 °C: 145A
Continuous drain current：
TA = 25 °C： 50A
TA = 70 °C： 50A
Pulsed drain current: 350A
Type designator: PKCH2BB
Type of transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd): 5 W
Maximum drain-source voltage (Vds): 30 V
Maximum gate-source voltage (Vgs): 20 V
Maximum gate-threshold voltage (Vgs(th)): 2.35 V
Maximum drain current (Id): 50 A
Maximum junction temperature (Tj): 150 °C
Total gate charge (Qg): 128 nC
Rise time (tr): 49 nS
Drain-source capacitance (Cd): 1052 pF
Maximum drain-source on-state resistance (Rds): 0.00099 Ohm
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