G1N65R035TB-N N-channel MOSFET
The G1N65R035TB-N is a hybrid normally-off Gallium Nitride (GaN) FET with the strongest gate and lowest reverse voltage drop of any wide bandgap device. They allow simple gate drives and provide best-in-class performance and excellent reliability.
• Strong gate with a high threshold, no negative gate drive required, and high repetitive input voltage tolerance of ±20V.
• Fast turn-on/turn-off speed to reduce crossover loss.
• Low QG and simple gate drive for lowest driver consumption at high frequencies.
• Lowest off-state reverse conduction VF of all SiC and GaN FETs, enabling low losses during dead time.
• Low QRR for excellent hard-switching bridge applications.
• High spike tolerance of 800V improves reliability.
• Achieve the highest conversion efficiency.
• Enables higher frequencies for compact power supplies.
• End product cost and size savings due to reduced thermal budget.
• Improved safety and reliability due to cooler operating temperature.
• Half-bridge buck/boost, totem pole PFC circuit, or inverter circuit.
• High efficiency/high-frequency phase shift, LLC, or other switching topologies.
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